Preparation and characterization of Ti-Zr-V-Cu getter films

Introduction Non-evaporable getter is now widely employed in many accelerators to mitigate the resistive-wall effect of the Ti-Zr-V getter coated vacuum chambers in the next generation accelerators.
Methods and discussions Quaternary Ti-Zr-V-Cu getter films were deposited by direct current (DC) magnetron sputtering. The DC/high frequency impedance and activation kinetics were investigated by four-probes/waveguide methods and in situ synchrotron radiation photoelectron spectroscopy (SRPES).
Conclusions Compared to Ti-Zr-V films, Ti-Zr-V-Cu films showed better conductivity, which is beneficial to eliminate the resistive-wall effect. However, its initial activation temperature is above 200 °C, and it needs to be activated at a higher temperature to achieve the required pumping performance.