Design and simulation of a novel 4H-SiC LGAD timing device

Keqi Wang; Tao Yang; Chenxi Fu; Li Gong; Songting Jiang; Xiaoshen Kang; Zaiyi Li; Hangrui Shi; Xin Shi; Weimin Song; Congcong Wang; Suyu Xiao; Zijun Xu; Xiyuan Zhang

doi:10.1007/s41605-023-00431-y

Volume 8 Issue 2

Jun. 2024

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Radiation Detection Technology and Methods > 2024 > 8(2): 1140-1147 > doi: 10.1007/s41605-023-00431-y

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Design and simulation of a novel 4H-SiC LGAD timing device

1 Institution of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
2 Department of Physics, Liaoning University, Shenyang 110036, Liaoning, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Department of Physics, Jilin University, Changchun 130015, Jilin, China;
5 Department of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin 150022, Heilongjiang, China;
6 College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, Shanxi, China;
7 Shandong Institute of Advanced Technology, Jinan 250100, China;
8 Shandong University, Jinan 250100, China

Funds:

This work is supported by the National Natural Science Foundation of China (Nos. 11961141014, 12205321, 11905092, 12105132, 11705078 and 92067110), China Postdoctoral Science Foundation (2022M710085), the State Key Laboratory of Particle Detection and Electronics (Nos. SKLPDE-ZZ-202218 and SKLPDE-KF-202313), Natural Science Foundation of Shandong Province Youth Fund (ZR202111120161) under CERN RD50 Collaboration framework and the Opening Foundation of Songshan Lake Materials Laboratory (No. 2021SLABFK04).

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Received Date: June 15, 2023
Revised Date: October 05, 2023
Accepted Date: October 19, 2023
Published Date: November 15, 2023

Abstract

Abstract

Purpose Silicon-based fast timing detectors have been widely used in high-energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in irradiation environment, and their detection performance decreases with the increase in the irradiation dose. Compared with silicon, silicon carbide (SiC) has a wider band gap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. Simultaneously, the low-gain avalanche detector avoids cross talk and high noise from high multiplication due to its moderate gain, and thus can maintain a high detector signal without increasing noise.
Aim Thus, the 4H-SiC particle detector, especially the low-gain avalanche detector, has the potential to detect the minimal ionizing particles under extreme irradiation and high-temperature environments.
Method In this work, the emphasis was placed on the design of a 4H-SiC low-gain avalanche detector (LGAD), especially the epitaxial structure and technical process which play main roles. In addition, a simulation tool—RASER (RAdiation SEmiconductoR)—was developed to simulate the performances including the electrical properties and time resolution of the 4H-SiC LGAD we proposed.
Conclusion The working voltage and gain effectiveness of the LGAD were verified by the simulation of electrical performances. The time resolution of the LGAD is (35.0 ± 0.2) ps under the electrical field of -800 V, which is better than that of the 4H-SiC PIN detector.
- Silicon carbide,
- LGAD,
- Radiation-resistant,
- Time resolution

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References (39)

References

[1]	G. Pellegrini et al., Technology developments and first measurements of low gain avalanche detectors (LGAD) for high energy physics applications. Nucl. Instrum. Methods Phys. Res. A 765, 12-16 (2014)
[2]	H.W. Sadrozinski et al., Ultrafast silicon detectors. Nucl. Instrum. Methods Phys. Res. Sect. A Acc. Spectrom. Detect. Assoc. Equip. 730, 226231 (2013)
[3]	G.F. Dalla Betta et al., Design and TCAD simulation of double-sided pixelated low gain avalanche detectors. Nucl. Instrum. Meth. Phys. Res. A. 796, 154157 (2015)
[4]	G. Giacomini et al., Fabrication and performance of AC-coupled LGADs. Jinst. 14, P09004 (2019)
[5]	M. Mandurrino et al., Demonstration of 200-, 100-, and 50-μm pitch resistive Accoupled silicon detectors (RSD) with 100 fill-factor for 4D particle tracking. IEEE Electron Device Lett. 40, 17801783 (2019)
[6]	G. Paternoster et al., Trench-Isolated low gain avalanche diodes (TI-LGADs). IEEE Electron Device Lett. 41, 884887 (2020)
[7]	N. Cartiglia et al., LGAD designs for future particle trackers. Nucl. Instrum. Methods Phys. Res. Sect. A Acc. Spectrom. Detect. Assoc. Equip. 979, 164383 (2020)
[8]	G. Giacomini et al., Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes. Front. Phys. 9, 618621 (2021)
[9]	Y. Zhao et al., A new approach to achieving high granularity for silicon diode detectors with impact ionization gain. IEEE Electron Device Lett. 2374, 012171 (2022)
[10]	A. Apresyan et al., Buried Layer Low Gain Avalanche Diodes. Available online: https://indico.cern.ch/event/981823/contributions/4293564/attach- ments/2251204/3818882/BL-LGAD-TIPP.pdf Accessed on 10 Feb 2023
[11]	W. Kewei et al., Design and testing of LGAD sensor with shallow carbon implantation. Nucl. Instrum. Methods Phys. Res. A 1046, 167697 (2023)
[12]	Y. Tan et al., Radiation effects on NDL prototype LGAD sensors after proton irradiation. Nucl. Instrum. Methods A 1010, 165559 (2021)
[13]	G. Pellegrini et al., Technology developments and first measurements of low gain avalanche detectors (LGAD) for high energy physics applications. Nucl. Instrum. Methods A 765, 12-16 (2014)
[14]	Y. Fan et al., Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China. Nucl. Instrum. Methods A 984, 164608 (2020)
[15]	M. Li et al., The performance of IHEP-NDL LGAD sensors after neutron irradiation. JNST 16, P08053 (2021)
[16]	ATLAS Collaboration. Technical Design Report: A High-Granularity Timing Detector for the ATLAS Phase-II Upgrade. Technical report, CERN, Geneva, (2020)
[17]	G. Kramberger et al., Radiation effects in low gain avalanche detectors after hadron irradiations. JINST 10, P07006 (2015)
[18]	I. Pintilie et al., Analysis of electron traps at the 4H-SiC/SiO₂ interface; influence by nitrogen implantation prior to wet oxidation. J. Appl. Phys. 108, 024503 (2010)
[19]	P.J. Sellin et al., New materials for radiation hard semiconductor dectectors. Nucl. Instrum. Methods Phys. Res. A 557, 479-489 (2006)
[20]	A. Harley-Trochimczyk et al., Low-power catalytic gas sensing using highly stable silicon carbide microheaters. J. Micromech. Microeng. 27, 045003 (2017)
[21]	Z. Xiaodong et al., Characterizing the timing performance of a fast 4H-SiC detector with an am source. IEEE Trans. Nucl. Sci. 60, 2352-2356 (2013)
[22]	Y. Tao et al., Time resolution of the 4H-SiC PIN detector. Front. Phys. 10, 718071 (2022)
[23]	Z. Mei et al., Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project. Nucl. Instrum. Methods Phys. Res. A 1033, 166604 (2022)
[24]	H.Y. Cha et al., Gate field emission induced breakdown in power SiC MESFETs. IEEE Electron Device Lett. 24, 571-573 (2003)
[25]	K. Wu et al., Design and fabrication of low gain avalanche detectors (LGAD): a TCAD simulation study. J. Instrum. 15, C03008 (2020)
[26]	R. Konishi et al., Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC. Mater. Sci. Eng. B 98, 286-293 (2003)
[27]	F. Laariedh et al., Investigations on Ni-Ti-Al ohmic contacts obtained on P-type 4H-SiC. Mater. Sci. Forum 711, 169-173 (2012)
[28]	Y. Hailong et al., Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-Si. J. Appl. Phys. 117, 025703 (2015)
[29]	raser. PyPI. Available online: https://pypi.org/project/raser/ accessed on 27 Jan 2022
[30]	J.E. Sanchez, DEVSIM: a TCAD semiconductor device simulator. J. Open Sour. Softw. 7(70), 3898 (2022)
[31]	Y. Tan et al., Timing performance simulation for 3D 4H-SiC detector. Micromachines 13, 718071 (2022)
[32]	S. Ramo, Currents induced by electron motion. Proc. IRE 27, 584585 (1939)
[33]	N. Moulin, Tunnel junction I(V) characteristics: review and a new model for p-n homojunctions. J. Appl. Phys. 126, 033105 (2019)
[34]	P.B. Klein et al., Lifetime-limiting defects in n^- 4H-SiC epilayers. Appl. Phys. Lett. 88, 052110 (2006)
[35]	C.G. Hemmingsson et al., Negative-U centers in 4H silicon carbide. Phys. Rev. B 58, R10119 (1998)
[36]	C. Hemmingsson et al., Deep level defects in electron-irradiated SiC epitaxial layers. J. Appl. Phys. 81, 61556159 (1997)
[37]	C. Yingxin et al., Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers. Diamond Relat. Mater. 92, 25-31 (2018)
[38]	M.S. Stefania et al., Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements. Appl. Phys. Express 10, 036631 (2017)
[39]	Y. Tan, Radiation resistant silicon and silicon carbide time resolution detector (University of Chinese Academy of Sciences, Beijing, Doctor, June2022)

Keqi Wang, Tao Yang, Chenxi Fu, et al. Design and simulation of a novel 4H-SiC LGAD timing device[J]. Radiation Detection Technology and Methods, 2024, 8(2): 1140-1147. DOI: 10.1007/s41605-023-00431-y

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